Abstract
In this letter, the metal induced crystallization (MIC) process is used in the Si-based conductive bridging resistive random access memory (CBRAM) application. The amorphous Si (a-Si) is transformed to crystallized poly-silicon (poly-Si) at a low temperature by using Ni metal for inducing poly-Si to provide the resistive switching. The MIC process can produce a highly preferred orientation poly-Si film, which can create the exact paths or grain boundaries through the top and down electrodes in the present CBRAM device. The grain boundary in MIC poly-Si layer can confine the conductive filament of metal bridging growth in it, which can improve the switching fluctuation behavior in the nonvolatile memory application. Compared with the a-Si based device, a significant improvement in terms of resistive switching parameters such as stability and resistance distribution is demonstrated in the MIC poly-Si CBRAM device. Moreover, the well-behaved memory performance, such as high ON/OFF resistance ratio (4 order), a large AC endurance (106), and good retention characteristics (104s at 125 °C) are achieved in the Cu/poly-Si/n+-Si CMOS compatible cross bar structure.
Original language | English |
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Article number | 203502 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 20 |
DOIs | |
State | Published - 16 Nov 2015 |