Metal-gate/high-κ/Ge nMOS at small CET with higher mobility than SiO 2 Si at wide range carrier densities

C. C. Liao*, T. C. Ku, M. H. Lin, Lang Zeng, Jinfeng Kang, Xiaoyan Liu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Chemical Compounds

Engineering & Materials Science