Metal-gate/high-κ/Ge nMOS at small CET with higher mobility than SiO 2 Si at wide range carrier densities

C. C. Liao*, T. C. Ku, M. H. Lin, Lang Zeng, Jinfeng Kang, Xiaoyan Liu, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

High-performance TaN/TiLaO/La 2 O 3 SiO 2 (111)-Ge nMOSFETs show high mobility of 432 cm 2 Vs at 10 13 cm -2 carrier density (N s ), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO 2 Si universal mobility at wide medium-high N s range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO 2 interfacial layer, and YbGe x n-Ge contact.

Original languageEnglish
Article number6403496
Pages (from-to)163-165
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
StatePublished - 10 Jan 2013

Keywords

  • (111)
  • Annealing
  • Ge
  • high-κ
  • laser
  • YbGe

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