Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio

Hui Wen Cheng, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The work-function fluctuation (WKF) in 16-nm single- and triple-fin field effect transistors (FETs) with different aspect ratio (AR) of device geometry is for the first time explored. The influences of grain size of metal gate and AR on σIoff/ σIon are drawn; the device with high AR and large number of silicon fin can suppress the WKF. The triple-fin FinFET (AR = 2) is superior to triple-fin tri-gate (AR = 1) and quasi-planar (AR = 0.5) structures, where gate materials TiN and MoN are considered in n- and p-typed FETs. Compared with nFET, the WKF of pFET is larger than that of n-typed device due to the gate material having wider work-function variation. The 3D device simulation study on WKF-induced σIoff/ σIon benefits fabrication of nulti-fin devices.

Original languageEnglish
Title of host publicationICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics
Pages48-51
Number of pages4
DOIs
StatePublished - 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka, Malaysia
Duration: 28 Jun 201030 Jun 2010

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CountryMalaysia
CityMelaka
Period28/06/1030/06/10

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    Cheng, H. W., & Li, Y. (2010). Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio. In ICSE 2010 - Proceedings IEEE International Conference on Semiconductor Electronics (pp. 48-51). [5549472] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2010.5549472