Metal gate work function adjustment for future CMOS technology

Q. Lu*, R. Lin, P. Ranade, T. J. King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

49 Scopus citations

Abstract

CMOS transistors were fabricated using a single metal, (110)- Mo, as the gate material. (110)-Mo shows high work function value that is suitable for PMOSFETs, and, with nitrogen implantation, its work function can be reduced to meet the requirements of NMOSFETs. The change in Mo work function can be controlled by the nitrogen implant parameters, which is potentially useful for multiple-VT technology. TEM and EDS analysis show that Mo gate electrodes are stable after undergoing a conventional CMOS process.

Original languageEnglish
Pages45-46
Number of pages2
StatePublished - 1 Jan 2001
Event2001 VLSI Technology Symposium - Kyoto, Japan
Duration: 12 Jun 200114 Jun 2001

Conference

Conference2001 VLSI Technology Symposium
CountryJapan
CityKyoto
Period12/06/0114/06/01

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