Metal Electromigration Damage Healing Under Bidirectional Current Stress

Jiang Tao, Nathan W. Cheung, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

The ac electromigration lifetime, without dc component, has been studied in a wide frequency range (mHz to 200 MHz), and is found to be linearly proportional to the repetition frequency of the ac stressing current. This behavior is observed in both of the metalization systems (Al-2% Si and Cu) investigated. This provides further confirmation that ac lifetime is orders of magnitude longer than dc lifetime and CMOS signal lines may be called upon to carry much larger current than allowed in the present practice.

Original languageEnglish
Pages (from-to)554-556
Number of pages3
JournalIEEE Electron Device Letters
Volume14
Issue number12
DOIs
StatePublished - 1 Jan 1993

Fingerprint Dive into the research topics of 'Metal Electromigration Damage Healing Under Bidirectional Current Stress'. Together they form a unique fingerprint.

Cite this