Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

Yee Chia Yeo*, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

389 Scopus citations

Abstract

The dependence of the gate work functions on the underlying gate dielectric material in metal-oxide-semiconductor (MOS) gate stacks was explained. The physics of the interface between the gate electrode and the gate dielectric was investigated using the interface dipole theory. The basic differences between the metal-dielectric and the poly-Si-dielectric interfaces were discussed.

Original languageEnglish
Pages (from-to)7266-7271
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
StatePublished - 15 Dec 2002

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