Metal contacts on shallow junctions

L. J. Chen*, S. L. Cheng, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Both ion implantation and silicidation have become standard processing steps in the fabrication of ULSI devices. As the device dimensions scale down to deep submicron region, it is essential to understand the interactions of metal contacts with highly doped shallow junctions. In this paper, issues in metal contacts on shallow junctions such as formation of sulicides, growth of epitaxial suicides, stability of suicides as well as the removal of projected range and end of range defects are highlighted. Recent developments in the investigation of the formation of TiSi2 on shallow junctions formed with N+ implantation are presented.

Original languageEnglish
Pages (from-to)231-236
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume121
Issue number1-4
DOIs
StatePublished - 1 Jan 1997

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