Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5 Ta1.2Nb0.8O9 thin films

Chia Hsing Huang, Yi Kai Wang, Hang Ting Lue, Jun Yao Huang, Ming Zi Lee, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Off-axis rf magnetron sputtering has been employed to grow Sr0.8Bi2.5Ta1.2Nb0.8 O9 (SBTN) ferroelectric thin films with (115) preferred orientation on SiO2/Si and Si substrates. The lower temperature and the higher oxygen mixing ratios [OMR, O2/ (Ar+O2)] used in film processing lead to reduction in the leakage current densities and widening the memory window of the resultant metal-ferroelectric-insulator-semiconductor (MFIS) structures. The maximum memory windows of the MFIS structures based on 40% OMR SBTN films deposited at 500 °C on SiO2/Si substrate are 2.87 and 2.27 V at the bias amplitudes of 10 and 8 V, respectively. With increasing applied voltage, the memory window also increases. The memory window decreases from 2.27 to 1.59 V after the 1011 switching cycles at a bias amplitude of 8 V. The capacitance difference, Δ C, between the two states decreases by 48% after retention time of 7000 s.

Original languageEnglish
Pages (from-to)2471-2476
Number of pages6
JournalJournal of the European Ceramic Society
Volume24
Issue number8
DOIs
StatePublished - Jul 2004

Keywords

  • (Sr,Bi)(Ta,Nb)O
  • Fatigue
  • Ferroelectric properties
  • Films
  • Lifetime
  • SBTN
  • Sputtering

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