Memory effect of sol-gel derived V-doped SrZrO 3 thin films

Chih Yi Liu, Chun Chieh Chuang, Jian Shian Chen, Arthur Wang, Wen Yueh Jang, Jien Chen Young, Kuang Yi Chiu, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


V-doped SrZrO 3 (SZO) thin films on LaNiO 3 /SiO 2 /Si substrate are synthesized by sol-gel method to form metal-insulator-metal (MIM) sandwich structure. The physical and electrical properties of the MIM device are studied. The structure and surface morphology of the SZO films are also characterized by X-ray diffraction and scanning electron microscopy. Such a device has the bistable switching properties of current-voltage characteristics. The resistive switching between high state and low state can also be operated with voltage pulses. The device with the properties of long retention time and non-destructive readout is expected to be suitable for nonvolatile memory application.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalThin Solid Films
Issue number1-2
StatePublished - 3 Jan 2006


  • Memory effect
  • Nonvolatile memory
  • RRAM
  • SrZrO

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