Memory effect of RF sputtered ZrO 2 thin films

Chih Yang Lin; Chung Yi Wu; Chen Yu Wu; Chun Chieh Lin; Tseung-Yuen Tseng

doi:10.1016/j.tsf.2007.07.140

Memory effect of RF sputtered ZrO ₂ thin films

Chih Yang Lin, Chung Yi Wu, Chen Yu Wu, Chun Chieh Lin, Tseung-Yuen Tseng^*

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Electrical properties of RF sputtered ZrO ₂ memory thin films were investigated in this study. The device with structure Al/ZrO ₂ /Pt shows a reproducible resistive switching behavior traced over 100 times at room temperature. Moreover, by using various top electrodes, such as Pt, Cu, Ni, Ag, Ti, and even W-probe, the resistive switching phenomenon can be observed in ZrO ₂ -based memory with Pt bottom electrode, indicating that the ZrO ₂ bulk dominates the resistive switching. The bias polarity dependent resistive switching behavior is demonstrated in the Ti/ZrO ₂ /Pt device, which might be due to interface reaction between Ti and ZrO ₂ film. The resistance value of high conductive state in the Ti/ZrO ₂ /Pt device decreases with increasing current compliance implying the possibility for multi-bit storage. Besides, the Ti/ZrO ₂ /Pt device can be operated over 2000 resistive switching cycles at 85 °C by sweeping DC voltage, and the two memory states demonstrate good stability under read voltage stress at room temperature and 85 °C. The write-read-erase-read operations can be over 10 ³ cycles at 85 °C. No data loss is found upon successive readout before and after performing 10 ³ endurance cycles at 85 °C. According to above experimental results, the ZrO ₂ thin film has high potential for nonvolatile memory application.

Original language	English
Pages (from-to)	444-448
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	2-4
DOIs	https://doi.org/10.1016/j.tsf.2007.07.140
State	Published - 3 Dec 2007

Keywords

Memory effect
Nonvolatile memory
Resistive switching
ZrO

Access to Document

10.1016/j.tsf.2007.07.140

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Memory effect of RF sputtered ZrO <sub>2</sub> thin films'. Together they form a unique fingerprint.

Cite this

@article{6da51703f9b741f8a6ce1530da1df719,

title = "Memory effect of RF sputtered ZrO 2 thin films",

abstract = " Electrical properties of RF sputtered ZrO 2 memory thin films were investigated in this study. The device with structure Al/ZrO 2 /Pt shows a reproducible resistive switching behavior traced over 100 times at room temperature. Moreover, by using various top electrodes, such as Pt, Cu, Ni, Ag, Ti, and even W-probe, the resistive switching phenomenon can be observed in ZrO 2 -based memory with Pt bottom electrode, indicating that the ZrO 2 bulk dominates the resistive switching. The bias polarity dependent resistive switching behavior is demonstrated in the Ti/ZrO 2 /Pt device, which might be due to interface reaction between Ti and ZrO 2 film. The resistance value of high conductive state in the Ti/ZrO 2 /Pt device decreases with increasing current compliance implying the possibility for multi-bit storage. Besides, the Ti/ZrO 2 /Pt device can be operated over 2000 resistive switching cycles at 85 °C by sweeping DC voltage, and the two memory states demonstrate good stability under read voltage stress at room temperature and 85 °C. The write-read-erase-read operations can be over 10 3 cycles at 85 °C. No data loss is found upon successive readout before and after performing 10 3 endurance cycles at 85 °C. According to above experimental results, the ZrO 2 thin film has high potential for nonvolatile memory application.",

keywords = "Memory effect, Nonvolatile memory, Resistive switching, ZrO",

author = "Lin, {Chih Yang} and Wu, {Chung Yi} and Wu, {Chen Yu} and Lin, {Chun Chieh} and Tseung-Yuen Tseng",

year = "2007",

month = dec,

day = "3",

doi = "10.1016/j.tsf.2007.07.140",

language = "English",

volume = "516",

pages = "444--448",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Memory effect of RF sputtered ZrO 2 thin films

AU - Lin, Chih Yang

AU - Wu, Chung Yi

AU - Wu, Chen Yu

AU - Lin, Chun Chieh

AU - Tseng, Tseung-Yuen

PY - 2007/12/3

Y1 - 2007/12/3

N2 - Electrical properties of RF sputtered ZrO 2 memory thin films were investigated in this study. The device with structure Al/ZrO 2 /Pt shows a reproducible resistive switching behavior traced over 100 times at room temperature. Moreover, by using various top electrodes, such as Pt, Cu, Ni, Ag, Ti, and even W-probe, the resistive switching phenomenon can be observed in ZrO 2 -based memory with Pt bottom electrode, indicating that the ZrO 2 bulk dominates the resistive switching. The bias polarity dependent resistive switching behavior is demonstrated in the Ti/ZrO 2 /Pt device, which might be due to interface reaction between Ti and ZrO 2 film. The resistance value of high conductive state in the Ti/ZrO 2 /Pt device decreases with increasing current compliance implying the possibility for multi-bit storage. Besides, the Ti/ZrO 2 /Pt device can be operated over 2000 resistive switching cycles at 85 °C by sweeping DC voltage, and the two memory states demonstrate good stability under read voltage stress at room temperature and 85 °C. The write-read-erase-read operations can be over 10 3 cycles at 85 °C. No data loss is found upon successive readout before and after performing 10 3 endurance cycles at 85 °C. According to above experimental results, the ZrO 2 thin film has high potential for nonvolatile memory application.

AB - Electrical properties of RF sputtered ZrO 2 memory thin films were investigated in this study. The device with structure Al/ZrO 2 /Pt shows a reproducible resistive switching behavior traced over 100 times at room temperature. Moreover, by using various top electrodes, such as Pt, Cu, Ni, Ag, Ti, and even W-probe, the resistive switching phenomenon can be observed in ZrO 2 -based memory with Pt bottom electrode, indicating that the ZrO 2 bulk dominates the resistive switching. The bias polarity dependent resistive switching behavior is demonstrated in the Ti/ZrO 2 /Pt device, which might be due to interface reaction between Ti and ZrO 2 film. The resistance value of high conductive state in the Ti/ZrO 2 /Pt device decreases with increasing current compliance implying the possibility for multi-bit storage. Besides, the Ti/ZrO 2 /Pt device can be operated over 2000 resistive switching cycles at 85 °C by sweeping DC voltage, and the two memory states demonstrate good stability under read voltage stress at room temperature and 85 °C. The write-read-erase-read operations can be over 10 3 cycles at 85 °C. No data loss is found upon successive readout before and after performing 10 3 endurance cycles at 85 °C. According to above experimental results, the ZrO 2 thin film has high potential for nonvolatile memory application.

KW - Memory effect

KW - Nonvolatile memory

KW - Resistive switching

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=36048952060&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.07.140

DO - 10.1016/j.tsf.2007.07.140

M3 - Article

AN - SCOPUS:36048952060

VL - 516

SP - 444

EP - 448

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2-4

ER -