Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure

T. C. Chang*, Po-Tsun Liu, S. T. Yan, F. M. Yang, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiCO film, which is attributed to the high barrier height induced by electron trapping in the SiCO film.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume152
Issue number2
DOIs
StatePublished - 17 Mar 2005

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