Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

Yu An Liao, Yi Kai Chao, Shu Wei Chang, Wen-Hao Chang, Jen Inn Chyi, Shih Yen Lin

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications.

Original languageEnglish
Article number143502
JournalApplied Physics Letters
Volume103
Issue number14
DOIs
StatePublished - 30 Sep 2013

Fingerprint Dive into the research topics of 'Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots'. Together they form a unique fingerprint.

Cite this