Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's

Ta-Hui Wang*, Tse En Chang, Lu Ping Chiang, Chimoon Huang, Jyh-Chyurn Guo

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

Oxide charge detrapping is monitored for the first time using a GIDL current. An analytical model accounting for the temporal evolution of the GIDL current has been developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions has been shown.

Original languageEnglish
Pages (from-to)232-233
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 11 Jun 199613 Jun 1996

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