Mechanism of surface conduction in semi-insulating GaAs

Mau-Chung Chang*, C. P. Lee, L. D. Hou, R. P. Vahrenkamp, C. G. Kirkpatrick

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

The space-charge-limited current leakage in processed semi-insulating GaAs wafer has been found to occur very close to the surface. The depth profile of the EL2 traps has been calculated from the measured trap-fill-limited voltage (Vt) of the leakage current versus etch depth and agrees well with the reported experimental result. A proposed mechanism of surface conduction is presented based on EL2 outdiffusion. The calculated substrate I-V relation agrees quantitatively with the measured results.

Original languageEnglish
Pages (from-to)869-871
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number9
DOIs
StatePublished - 1 Dec 1984

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