Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Umesh Chand, Kuan Chang Huang, Chun Yang Huang, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


In this paper, the nonlinear switching mechanism of the Ti/HfO2/Al2O3/TiN crossbar structure resistive random access memory device with good reliability is investigated. The nonlinearity of the device can be revealed by inserting a large bandgap of an Al2O3 thin layer between the TiN bottom electrode and the HfO2 switching film. The nonlinear switching mechanism caused by Flower-Nordheim tunneling involves the tunneling barrier of the Al2O3 layer. Besides, the nonlinear behavior is also sensitive to the thickness of the inserting Al2O3 layer. A high nonlinear factor of 37, large endurance more than 104, and good retention properties are achieved in the Ti/HfO2/Al2O3 (1-nm)/TiN structure.

Original languageEnglish
Article number7247697
Pages (from-to)3665-3670
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 9 Sep 2015


  • Double layer
  • HfO
  • nonlinear
  • resistive random access memory (RRAM)
  • resistive switching
  • tunneling barrier

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