Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

Tien-Sheng Chao*, M. C. Liaw, C. H. Chu, C. Y. Chang, Chao-Hsin Chien, C. P. Hao, T. F. Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

The mechanism of the nitrogen co-implant to suppress the boron penetration in p+-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties.

Original languageEnglish
Pages (from-to)1781-1782
Number of pages2
JournalApplied Physics Letters
Volume69
Issue number12
DOIs
StatePublished - 16 Sep 1996

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