Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery

Bing Yue Tsui*, Yu Chen Chang, Yi Ju Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Impact of channel engineering on Ge NMOSFET is investigated. Ion implantation in channel region generates defects. Vacancy defect acts as acceptor to increase hole concentration and the charged vacancy acts as scattering center to degrade channel carrier mobility and driving current. High temperature annealing at least at 700 °C must be performed to annihilate these defects and recover device characteristics.

Original languageEnglish
Title of host publication2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages74-75
Number of pages2
ISBN (Electronic)9781728142326
DOIs
StatePublished - Aug 2020
Event2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
Duration: 10 Aug 202013 Aug 2020

Publication series

Name2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
CountryTaiwan
CityHsinchu
Period10/08/2013/08/20

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