Mechanism of Aluminum Induced Lateral Crystallization of Amorphous Silicon

shih-Yang Huang, Chuan-Chi Wang, Chih Lung Lin, Yu-Lin Tsai, Cheun Guang Chao, Tzeng-Feng Liu

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Abstract

The aluminium-induced lateral crystallization (AILC) of amorphous silicon (a-Si) on a glass substrate has been investigated. By means of a photoresist-based process, Al islands (100 nm) were thermally evaporated using 15 V, 3.5 A, and 25 V, 5.6A on the a-Si layer (100 nm), which was deposited on a glass substrate. SEM examinations indicated that the Al islands exhibited smooth and crystalline-grain morphology. Annealing processes were carried out at 748 and 823 K for various times. After annealing, AILC could be clearly observed in the crystalline-grain sample, but not in the smooth sample. TEM analyses showed that the mechanism of AILC resulted from two layer exchange processes. First, the Al islands exchanged with the underlying a-Si layer vertically during AIC, and then the generation of Al particles accompanying AIC caused a lateral layer exchange with the remaining a-Si layer with further annealing. (C) 2010 The Japan Society of Applied Physics
Original languageEnglish
Article number095601
JournalJapanese Journal of Applied Physics
Volume49
Issue number9
DOIs
StatePublished - 2010

Keywords

  • TRANSMISSION ELECTRON-MICROSCOPY; POLYCRYSTALLINE SILICON; LAYER EXCHANGE; FILMS

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    Huang, S-Y., Wang, C-C., Lin, C. L., Tsai, Y-L., Chao, C. G., & Liu, T-F. (2010). Mechanism of Aluminum Induced Lateral Crystallization of Amorphous Silicon. Japanese Journal of Applied Physics, 49(9), [095601]. https://doi.org/10.1143/JJAP.49.095601