Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-xTix)O3 ferroelectric memory

Ching Wei Tsai*, Sheng Chih Lai, C. T. Yen, Hao Ming Lien, Hsiang Lan Lung, Tai Bor Wu, Ta-Hui Wang, Rich Liu, Chin Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Slow-switching effect in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The slow-switching effect becomes worse at lower operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly for low-voltage and high-speed applications. This slow-switching effect is believed to be attributed to slowing down of polarization switching caused by band bending from Schottky built-in potential at the electrode/ferroelectric interface. The proposed mechanism is supported by the polarity dependence in an asymmetric LNO/PZT/Pt sample.

Original languageEnglish
Pages (from-to)217-223
Number of pages7
JournalIEEE Transactions on Device and Materials Reliability
Volume5
Issue number2
DOIs
StatePublished - 1 Jun 2005

Keywords

  • Ferroelectric memory
  • Schottky built-in potential
  • Slow-switching effect

Fingerprint Dive into the research topics of 'Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr<sub>1-x</sub>Ti<sub>x</sub>)O<sub>3</sub> ferroelectric memory'. Together they form a unique fingerprint.

Cite this