Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

S. C. Lai*, C. W. Tsai, C. T. Yen, C. L. Liu, S. Y. Lee, H. M. Lien, S. L. Lung, Chao-Hsin Chien, T. B. Wu, Ta-Hui Wang, Rich Liu, C. Y. Lu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

Original languageEnglish
Pages123-126
Number of pages4
StatePublished - 1 Dec 2004
EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
Duration: 5 Jul 20048 Jul 2004

Conference

ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
CountryTaiwan
Period5/07/048/07/04

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