Mechanism and modeling of ring pattern formation for electron beam exposure on zwitterresist

Jem Kun Chen, Fu-Hsiang Ko*, Feng Chih Chang, Hsuen Li Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The first application of simultaneous patterning technology on positive and negative tones in lithography has been reported previously. In a further study, we find that the relationship between the applied doses and the obtained ring width does not exhibit linearity, irrespective of the design radius in the center dot. The observation suggests that the assumption of only using the scattering effect in explaining the ring width needs to be improved. At higher electron doses, the heating effect from center area also plays important role.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages110-111
Number of pages2
ISBN (Electronic)4891140313, 9784891140311
DOIs
StatePublished - 1 Jan 2002
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: 6 Nov 20028 Nov 2002

Publication series

Name2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period6/11/028/11/02

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