Short-channel effects on threshold voltage were evaluated in nitrided oxide n- and p- MOSFETs. It was found that some nitrided oxide n-MOSFETs show reduced threshold voltage, compared with that for a very long channel transistor, even when the channel length is 4μm, while such effect was found to be small in the p-MOSFET case. The effect is probably explained by the interface states caused by mechanical stress in the nitrided oxide gate samples.
|Number of pages||4|
|State||Published - 1990|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 22 Aug 1990 → 24 Aug 1990
|Conference||22nd International Conference on Solid State Devices and Materials|
|Period||22/08/90 → 24/08/90|