Mechanical stress induced threshold voltage shifts for nitrided oxide gate m- and p- MOSFETs

H. S. Momose; T. Morimoto; S. Takagi; K. Yamabe; S. Onga; H. Iwai

Mechanical stress induced threshold voltage shifts for nitrided oxide gate m^- and p^- MOSFETs

H. S. Momose^*, T. Morimoto, S. Takagi, K. Yamabe, S. Onga, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

Short-channel effects on threshold voltage were evaluated in nitrided oxide n- and p- MOSFETs. It was found that some nitrided oxide n-MOSFETs show reduced threshold voltage, compared with that for a very long channel transistor, even when the channel length is 4μm, while such effect was found to be small in the p-MOSFET case. The effect is probably explained by the interface states caused by mechanical stress in the nitrided oxide gate samples.

Original language	English
Pages	279-282
Number of pages	4
State	Published - 1990
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 22 Aug 1990 → 24 Aug 1990

Conference

Conference	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	22/08/90 → 24/08/90

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title = "Mechanical stress induced threshold voltage shifts for nitrided oxide gate m- and p- MOSFETs",

abstract = "Short-channel effects on threshold voltage were evaluated in nitrided oxide n- and p- MOSFETs. It was found that some nitrided oxide n-MOSFETs show reduced threshold voltage, compared with that for a very long channel transistor, even when the channel length is 4μm, while such effect was found to be small in the p-MOSFET case. The effect is probably explained by the interface states caused by mechanical stress in the nitrided oxide gate samples.",

author = "Momose, {H. S.} and T. Morimoto and S. Takagi and K. Yamabe and S. Onga and H. Iwai",

year = "1990",

language = "English",

pages = "279--282",

note = "null ; Conference date: 22-08-1990 Through 24-08-1990",

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TY - CONF

T1 - Mechanical stress induced threshold voltage shifts for nitrided oxide gate m- and p- MOSFETs

AU - Momose, H. S.

AU - Morimoto, T.

AU - Takagi, S.

AU - Yamabe, K.

AU - Onga, S.

AU - Iwai, H.

PY - 1990

Y1 - 1990

N2 - Short-channel effects on threshold voltage were evaluated in nitrided oxide n- and p- MOSFETs. It was found that some nitrided oxide n-MOSFETs show reduced threshold voltage, compared with that for a very long channel transistor, even when the channel length is 4μm, while such effect was found to be small in the p-MOSFET case. The effect is probably explained by the interface states caused by mechanical stress in the nitrided oxide gate samples.

AB - Short-channel effects on threshold voltage were evaluated in nitrided oxide n- and p- MOSFETs. It was found that some nitrided oxide n-MOSFETs show reduced threshold voltage, compared with that for a very long channel transistor, even when the channel length is 4μm, while such effect was found to be small in the p-MOSFET case. The effect is probably explained by the interface states caused by mechanical stress in the nitrided oxide gate samples.

UR - http://www.scopus.com/inward/record.url?scp=0025536634&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0025536634

SP - 279

EP - 282

Y2 - 22 August 1990 through 24 August 1990

ER -

Mechanical stress induced threshold voltage shifts for nitrided oxide gate m- and p- MOSFETs

Abstract

Conference

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Mechanical stress induced threshold voltage shifts for nitrided oxide gate m^- and p^- MOSFETs