Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO2 filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.
|Number of pages||5|
|Journal||IEICE Transactions on Electronics|
|State||Published - Feb 1994|
|Event||Proceedings of the VLSI Process and Device Modeling Workshop (VPAD93) - Nara, Jpn|
Duration: 14 May 1993 → 15 May 1993