Mechanical stress analysis of trench isolation using a two-dimensional simulation

Satoshi Matsuda*, Nobuyuki Itoh, Chihiro Yoshino, Yoshiroh Tsuboi, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO2 filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.

Original languageEnglish
Pages (from-to)124-128
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE77-C
Issue number2
StatePublished - Feb 1994
EventProceedings of the VLSI Process and Device Modeling Workshop (VPAD93) - Nara, Jpn
Duration: 14 May 199315 May 1993

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    Matsuda, S., Itoh, N., Yoshino, C., Tsuboi, Y., Katsumata, Y., & Iwai, H. (1994). Mechanical stress analysis of trench isolation using a two-dimensional simulation. IEICE Transactions on Electronics, E77-C(2), 124-128.