Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

M. C. Wang, S. W. Tsao, T. C. Chang, Y. P. Lin, Po-Tsun Liu, J. R. Chen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The photo leakage current (IPLC) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger IPLC of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (EF). Experimental results show the IPLC of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (Ea) of a-Si:H TFTs under the outward bending strain also confirmed the shift of EF.

Original languageEnglish
Pages (from-to)1485-1487
Number of pages3
JournalSolid-State Electronics
Volume54
Issue number11
DOIs
StatePublished - 1 Nov 2010

Keywords

  • A-Si:H TFTs
  • Mechanical strain
  • Photo leakage current

Fingerprint Dive into the research topics of 'Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors'. Together they form a unique fingerprint.

Cite this