Measuring the edge recombination velocity of monolayer semiconductors

Peida Zhao, Matin Amani, Der Hsien Lien, Geun Ho Ahn, Daisuke Kiriya, James P. Mastandrea, Joel W. Ager, Eli Yablonovitch, Daryl C. Chrzan, Ali Javey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing these materials for high performance electronic and optoelectronic devices.1-5 WS2 monolayers patterned into disks of varying diameters are used to experimentally determine the influence of edges on their optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τeffective, as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on non-radiative recombination. The unpassivated WS2 monolayer disks yield an ERV ∼ 4 × 104 cm/s. This work quantifies the non-radiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization technique towards experimental explorations of edge passivation methods for 2D materials.

Original languageEnglish
Title of host publication2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1
Number of pages1
ISBN (Electronic)9781538632901
DOIs
StatePublished - 28 Jun 2017
Event5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Berkeley, United States
Duration: 19 Oct 201720 Oct 2017

Publication series

Name2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings
Volume2018-January

Conference

Conference5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017
CountryUnited States
CityBerkeley
Period19/10/1720/10/17

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  • Cite this

    Zhao, P., Amani, M., Lien, D. H., Ahn, G. H., Kiriya, D., Mastandrea, J. P., Ager, J. W., Yablonovitch, E., Chrzan, D. C., & Javey, A. (2017). Measuring the edge recombination velocity of monolayer semiconductors. In 2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings (pp. 1). (2017 5th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2017 - Proceedings; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/E3S.2017.8246197