Measurement of thermal stress in Pd 2 Si film on Si(111) by absorption edge contour mapping

H. D. Chen*, G. E. White, S. R. Stock

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd 2 Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd 2 Si has been determined to be 23 × 10 -6 K -1 . Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C.

Original languageEnglish
Pages (from-to)61-64
Number of pages4
JournalMaterials Letters
Volume4
Issue number2
DOIs
StatePublished - 1 Jan 1986

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