Measurement of the interfacial energy between amorphous Si and crystalline Si

King-Ning Tu*

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110.

Original languageEnglish
Pages (from-to)32-34
Number of pages3
JournalApplied Physics A Solids and Surfaces
Volume53
Issue number1
DOIs
StatePublished - 1 Jul 1991

Keywords

  • 73.40

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