Measurement of temperature distribution in SnAg3.5 flip-chip solder joints during current stressing using infrared microscopy

Hsiang Yao Hsiao*, Chih Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Several simulation studies reported that a hot spot exists in flip-chip solder bumps under accelerated electromigration. Yet, there are no experimental data to verify it. In this paper, the temperature distribution during electromigration in flip-chip SnAg3.5 solder bumps is directly inspected using infrared microscopy. Two clear hot spots are observed in the bump. One is located at the region with peak current density, and the other one is at the bump edge under the current-feeding metallization on the chip side. Under a current stress of 1.06 × 104 A/cm2, the temperature in the two hot spots are 161.7 °C and 167.8 °C, respectively, which surpass the average bump temperature of 150.5 °C. In addition, effect of under-bump-metallization (UBM) thickness on the hot spots is also examined. It indicates that the hot-spot temperature in the solder bump increases for the solder joints with a thinner UBM. Electromigration test indicates that these hot spots have significant influence on the initial failure location.

Original languageEnglish
Title of host publication10th Electronics Packaging Technology Conference, EPTC 2008
Pages639-643
Number of pages5
DOIs
StatePublished - 1 Dec 2008
Event10th Electronics Packaging Technology Conference, EPTC 2008 - Singapore, Singapore
Duration: 9 Dec 200812 Dec 2008

Publication series

Name10th Electronics Packaging Technology Conference, EPTC 2008

Conference

Conference10th Electronics Packaging Technology Conference, EPTC 2008
CountrySingapore
CitySingapore
Period9/12/0812/12/08

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