Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS

Fariborz Assaderaghi; Jian Chen; Ping Ko; Chen-Ming Hu

doi:10.1109/SOI.1992.664819

Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS

Fariborz Assaderaghi, Jian Chen, Ping Ko, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Original language	English
Title of host publication	1992 IEEE International SOI Conference, SOI 1992 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	112-113
Number of pages	2
ISBN (Electronic)	0780307763
DOIs	https://doi.org/10.1109/SOI.1992.664819
State	Published - 1 Jan 1992
Event	1992 IEEE International SOI Conference, SOI 1992 - Ponte Vedra Beach, United States Duration: 6 Oct 1992 → 8 Oct 1992

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	1992 IEEE International SOI Conference, SOI 1992
Country	United States
City	Ponte Vedra Beach
Period	6/10/92 → 8/10/92

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10.1109/SOI.1992.664819

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Assaderaghi, F., Chen, J., Ko, P., & Hu, C-M. (1992). Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS. In 1992 IEEE International SOI Conference, SOI 1992 - Proceedings (pp. 112-113). [664819] (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.1992.664819

@inproceedings{911c6784b05043f889477b5270863553,

title = "Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS",

author = "Fariborz Assaderaghi and Jian Chen and Ping Ko and Chen-Ming Hu",

year = "1992",

month = jan,

day = "1",

doi = "10.1109/SOI.1992.664819",

language = "English",

series = "Proceedings - IEEE International SOI Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "112--113",

booktitle = "1992 IEEE International SOI Conference, SOI 1992 - Proceedings",

address = "United States",

note = "null ; Conference date: 06-10-1992 Through 08-10-1992",

}

Assaderaghi, F, Chen, J, Ko, P & Hu, C-M 1992, Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS. in 1992 IEEE International SOI Conference, SOI 1992 - Proceedings., 664819, Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers Inc., pp. 112-113, 1992 IEEE International SOI Conference, SOI 1992, Ponte Vedra Beach, United States, 6/10/92. https://doi.org/10.1109/SOI.1992.664819

Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS. / Assaderaghi, Fariborz; Chen, Jian; Ko, Ping; Hu, Chen-Ming.

1992 IEEE International SOI Conference, SOI 1992 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 1992. p. 112-113 664819 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS

AU - Assaderaghi, Fariborz

AU - Chen, Jian

AU - Ko, Ping

AU - Hu, Chen-Ming

PY - 1992/1/1

Y1 - 1992/1/1

UR - http://www.scopus.com/inward/record.url?scp=0010377938&partnerID=8YFLogxK

U2 - 10.1109/SOI.1992.664819

DO - 10.1109/SOI.1992.664819

M3 - Conference contribution

AN - SCOPUS:0010377938

T3 - Proceedings - IEEE International SOI Conference

SP - 112

EP - 113

BT - 1992 IEEE International SOI Conference, SOI 1992 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 6 October 1992 through 8 October 1992

ER -

Assaderaghi F, Chen J, Ko P, Hu C-M. Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS. In 1992 IEEE International SOI Conference, SOI 1992 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 1992. p. 112-113. 664819. (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.1992.664819

Measurement of electron and hole saturation velocities in silicon inversion layers using SOI MOSFETS

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