Measurement of electromigration activation energy In eutectic SnPb and SnAg flip-chip solder joints with Cu and Nl under-bump metallization

Hsiao Yun Chen, Chih Chen*

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Electromigration activation energy is measured by a built-in sensor that detects the real temperature during current stressing. Activation energy can be accurately determined by calibrating the temperature using the temperature coefficient of resistivity of an Al trace. The activation energies for eutectic SnAg and SnPb solder bumps are measured on Cu under-bump metallization (UBM) as 1.06 and 0.87 eV, respectively. The activation energy mainly depends on the formation of Cu-Sn intermetallic compounds. On the other hand, the activation energy for eutectic SnAg solder bumpswith Cu-Ni UBM is measured as 0.84 eV, which is mainly related to void formation in the solder.

Original languageEnglish
Pages (from-to)1847-1853
Number of pages7
JournalJournal of Materials Research
Volume25
Issue number9
DOIs
StatePublished - 1 Sep 2010

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