MEASUREMENT-BASED CHARGE SHEET CAPACITANCE MODEL OF SHORT-CHANNEL MOSFET'S FOR SPICE.

Hong June Park*, Ping Keung Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

Based on the surface potential formulation, a charge-sheet capacitance model for short-channel MOSFETs has been developed and implemented in SPICE. No iterations are needed to find the surface potential. The model equations are charge-based and include the drift velocity saturation, the diffusion current, the effect of the bulk charge, the channel length modulation, and the channel side fringing field capacitances. As a byproduct of the development of this capacitance model, an analytic charge-sheet current model has been obtained. The current, charges, their first derivatives (conductance and capacitance), and second derivatives are continuous over all the operating regions. An automatic direct-on-wafer off-chip capacitance measurement system with 14 aF rms resolution has been developed for performing the model parameter extraction.

Original languageEnglish
Pages (from-to)40-43
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1986

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