Based on the surface potential formulation, a charge-sheet capacitance model for short-channel MOSFETs has been developed and implemented in SPICE. No iterations are needed to find the surface potential. The model equations are charge-based and include the drift velocity saturation, the diffusion current, the effect of the bulk charge, the channel length modulation, and the channel side fringing field capacitances. As a byproduct of the development of this capacitance model, an analytic charge-sheet current model has been obtained. The current, charges, their first derivatives (conductance and capacitance), and second derivatives are continuous over all the operating regions. An automatic direct-on-wafer off-chip capacitance measurement system with 14 aF rms resolution has been developed for performing the model parameter extraction.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1986|