A pseudo two-dimensional multi-conduction path model has been developed to explain substrate current leakage in GaAs integrated circuits based on trap-fill-limited carrier injection. Injection occurs at the n** plus -p-n** plus region near the substrate surface as a result of the outdiffusion of deep traps. The amount of current leakage and the threshold voltage for sudden current increase are correlated with the EL2 and carbon distribution in the substrate. Good agreement between the experimental results and the theoretical predictions is achieved.
|Title of host publication||Unknown Host Publication Title|
|Editors||David C. Look, John S. Blakemore|
|Publisher||Shiva Publ Ltd, Nantwich, Engl Also|
|Number of pages||9|
|State||Published - 1 Dec 1984|