Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

Yu Lin Hsiao, Chia Ao Chang, Edward Yi Chang*, Jer Shen Maa, Chia Ta Chang, Yi Jie Wang, You Chen Weng

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

An Al 0.2 Ga 0.8 N/GaN/Al 0.1 Ga 0.9 N double-heterostructure field effect transistor (DH-FET) structure was grown on a 150-mm-diameter Si substrate and the crystalline quality of the epitaxial material was found to be comparable to that of an Al 0.2 Ga 0.8 N/GaN single-heterostructure field effect transistor (SH-FET) structure. The fabricated DH-FET shows a lower buffer leakage current of 9.2 × 10 -5 mA/mm and an improved off-state breakdown voltage of higher than 200V, whereas the SH-FET shows a much higher buffer leakage current of 6.0 × 10 -3 mA/mm and a lower breakdown voltage of 130V. These significant improvements show that the Al 0.2 Ga 0.8 N/GaN/Al 0.1 Ga 0.9 N DH-FET is an effective structure for high-power electronic applications.

Original languageEnglish
Article number055501
JournalApplied Physics Express
Volume7
Issue number5
DOIs
StatePublished - 1 Jan 2014

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