Material characteristics of InGaN based light emitting diodes grown on porous Si substrates

Dongmei Deng, Ching Hsueh Chiu, Hao-Chung Kuo, Peng Chen, Kei May Lau*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with 2 μm thick crack-free GaN buffer layers were grown on porous Si substrates by metalorganic chemical vapor deposition. The material properties of LEDs grown on porous Si were studied in comparison with LEDs grown on grid-patterned Si. The (101̄5) asymmetric reciprocal space mapping (RSM) results indicate that LEDs grown on porous Si have less lattice tilt or distortion than those grown on grid-patterned Si. Both RSM and micro-photoluminescence (micro-PL) measurements suggest that multiple quantum wells grown on porous Si are less stressed. Mechanisms behind this partial strain relaxation are discussed.

Original languageEnglish
Pages (from-to)238-241
Number of pages4
JournalJournal of Crystal Growth
Volume315
Issue number1
DOIs
StatePublished - 15 Jan 2011

Keywords

  • A1. Atomic force microscopy
  • A1. High resolution X-ray diffraction
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitride
  • B2. Semiconductor IIIV materials
  • B3. Light emitting diode

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