The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.
|Number of pages||5|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - 1 Dec 2007|
|Event||International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan|
Duration: 22 Oct 2006 → 27 Oct 2006