Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN

Te Chung Wang, Tien-chang Lu*, Tsung Shine Ko, Hao-Chung Kuo, Hou Guang Chen, Min Yu, Chang Cheng Chuo, Zheng Hong Lee, Sing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

The crystal quality of a-plane GaN film was successfully improved by using trenched epitaxial lateral overgrowth (TELOG) of a-plane GaN. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using TELOG. The low threading dislocation density investigated by transmission electron microscopy was estimated to be 3 × 107 cm-2 on the N-face GaN wing. According the results of μ-PL and CL, the threading dislocations are the strongly non-radiative center in a-plane GaN film. Finally, we concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film.

Original languageEnglish
Pages (from-to)2519-2523
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
StatePublished - 1 Dec 2007
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 22 Oct 200627 Oct 2006

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