Material and interface instabilities of high-k MOS gate dielectric films

Hei Wong*, Hiroshi Iwai, Kuniyuki Kakushima

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

It is a general consensus that high-k dielectric films, transition metal oxides or rare earth oxides, have to be introduced for future generations of CMOS technology. However, high-k gate dielectric materials are found to have many inherent reliability problems because of their fundamental material properties and the instable Si/high-k interface. Particularly, the thermal instability, the poor interface properties with silicon, interface silicate layers formation, high interface and oxide trap density, low breakdown field and low mobility have become major concerns on the reliabilty of the MOS device. This work highlights the issues related to the thermal instability of high-k materials. The instabilties associated with high-k dielectric/Si interfaces will be also discussed.

Original languageEnglish
Title of host publication1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Pages169-174
Number of pages6
DOIs
StatePublished - 2006
Event1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 - Mishima, Shizuoka, Japan
Duration: 30 Jan 20061 Feb 2006

Publication series

Name2006 International Workshop on Nano CMOS - Proceedings, IWNC

Conference

Conference1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
CountryJapan
CityMishima, Shizuoka
Period30/01/061/02/06

Keywords

  • High-k dielectrics
  • Interface
  • Thermal stability

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    Wong, H., Iwai, H., & Kakushima, K. (2006). Material and interface instabilities of high-k MOS gate dielectric films. In 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 (pp. 169-174). [4570990] (2006 International Workshop on Nano CMOS - Proceedings, IWNC). https://doi.org/10.1109/IWNC.2006.4570990