A GaAs BiFET LSI technology has been successfully developed for high speed and mixed signal circuit applications. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have been produced, with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front-end receiver applications. Through this technology, several LSI circuits, including a 2 Gsps 2-bit prototype DRFM, a 2 GHz 32 × 2 bit shift register, a sample and hold circuit with 9-bit resolution at 200 Msps and SRAMs with a record access time (330ps) have been successfully demonstrated.
|Number of pages||4|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95 - San Francisco, CA, USA|
Duration: 25 Oct 1995 → 27 Oct 1995
|Conference||Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95|
|City||San Francisco, CA, USA|
|Period||25/10/95 → 27/10/95|