Manufacturable GaAs BiFET technology for high speed signal processing

Mau-Chung Chang*

*Corresponding author for this work

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

A GaAs BiFET LSI technology has been successfully developed for high speed and mixed signal circuit applications. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have been produced, with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front-end receiver applications. Through this technology, several LSI circuits, including a 2 Gsps 2-bit prototype DRFM, a 2 GHz 32 × 2 bit shift register, a sample and hold circuit with 9-bit resolution at 200 Msps and SRAMs with a record access time (330ps) have been successfully demonstrated.

Original languageEnglish
Pages279-282
Number of pages4
StatePublished - 1 Dec 1995
EventProceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95 - San Francisco, CA, USA
Duration: 25 Oct 199527 Oct 1995

Conference

ConferenceProceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95
CitySan Francisco, CA, USA
Period25/10/9527/10/95

Fingerprint Dive into the research topics of 'Manufacturable GaAs BiFET technology for high speed signal processing'. Together they form a unique fingerprint.

  • Cite this

    Chang, M-C. (1995). Manufacturable GaAs BiFET technology for high speed signal processing. 279-282. Paper presented at Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95, San Francisco, CA, USA, .