Majority- and minority-carrier traps in Te-doped AlInP

Y. R. Wu*, W. J. Sung, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24±0.05 and 0.25±0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect.

Original languageEnglish
Pages (from-to)284-286
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number2
DOIs
StatePublished - 11 Jan 1999

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