Magnetotransport in an aluminum thin film on a gaas substrate grown by molecular beam epitaxy

Shun-Tsung Lo, Chiashain Chuang, Sheng-Di Lin*, Kuang Yao Chen, Chi Te Liang, Shih Wei Lin, Jau Yang Wu, Mao Rong Yeh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

Original languageEnglish
Article number102
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume6
Issue number1
DOIs
StatePublished - 26 Jan 2011

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