Magnetotransport in an aluminum thin film on a gaas substrate grown by molecular beam epitaxy

Shun-Tsung Lo; Chiashain Chuang; Sheng-Di Lin; Kuang Yao Chen; Chi Te Liang; Shih Wei Lin; Jau Yang Wu; Mao Rong Yeh

doi:10.1186/1556-276X-6-102

Magnetotransport in an aluminum thin film on a gaas substrate grown by molecular beam epitaxy

Shun-Tsung Lo, Chiashain Chuang, Sheng-Di Lin^*, Kuang Yao Chen, Chi Te Liang, Shih Wei Lin, Jau Yang Wu, Mao Rong Yeh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

Original language	English
Article number	102
Pages (from-to)	1-6
Number of pages	6
Journal	Nanoscale Research Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-6-102
State	Published - 26 Jan 2011

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abstract = "Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.",

author = "Shun-Tsung Lo and Chiashain Chuang and Sheng-Di Lin and Chen, {Kuang Yao} and Liang, {Chi Te} and Lin, {Shih Wei} and Wu, {Jau Yang} and Yeh, {Mao Rong}",

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AU - Lo, Shun-Tsung

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AU - Lin, Sheng-Di

AU - Chen, Kuang Yao

AU - Liang, Chi Te

AU - Lin, Shih Wei

AU - Wu, Jau Yang

AU - Yeh, Mao Rong

PY - 2011/1/26

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N2 - Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

AB - Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.

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Magnetotransport in an aluminum thin film on a gaas substrate grown by molecular beam epitaxy

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