MA BE-SONOS: A bandgap engineered SONOS using metal gate and Al 2O3 blocking layer to overcome erase saturation

Sheng Chih Lai*, Hang Ting Lue, Ming Jui Yang, Jung Yu Hsieh, Szu Yu Wang, Tai Bor Wu, Guang Li Luo, Chao-Hsin Chien, Erh Kun Lai, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

24 Scopus citations

Abstract

A bandgap engineered SONOS (BE-SONOS) [1] using Al2O3 top blocking layer and metal gate (MA BE-SONOS) is proposed to provide very fast erase speed without erase saturation. Compared with MANOS [2] using a thick (4.5 nm) tunnel oxide, MA BE-SONOS shows dramatically faster erase speed, owing to the help of bandgap engineered ONO barrier that facilitates hole tunneling. Compared with BE-SONOS using P+-poly gate and top oxide, MA BE-SONOS does not show any erase saturation, owing to the help of metal gate and Al 2O3 blocking layer, which greatly reduce gate injection during erase. Very large memory window (>7V) can be achieved with excellent data retention. MA BE-SONOS overcomes the erase difficulty in SONOS-type devices, and is highly potential in the future flash memory technology.

Original languageEnglish
Title of host publication2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW
Pages88-89
Number of pages2
DOIs
StatePublished - 1 Dec 2007
Event2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW - Monterey, CA, United States
Duration: 26 Aug 200730 Aug 2007

Publication series

Name2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Conference

Conference2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW
CountryUnited States
CityMonterey, CA
Period26/08/0730/08/07

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