Luminescent properties of sol-gel prepared Y3Al5O12:Tb thin films

Jun Ren Lo*, Tseung-Yuen Tseng, Jyh Haur Tyan, Jammy C.M. Huang

*Corresponding author for this work

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

A series of Tb-activated Y3Al5O12 films have been fabricated by spin coating on silicon substrate with sol-gel solutions. The formation of a single garnet phase is observed at 800 °C for 1 h in rapid thermal annealing furnace. The emission spectrum of the films induced by ultraviolet (UV) and electron excitations show the 5D to 6F transition and consisted of two groups, 5D3 to 6F (before 485 nm) and 5D4 to 6F (after 485 nm). The emission intensities of the films are dependent on the Tb concentrations.

Original languageEnglish
Pages197-201
Number of pages5
StatePublished - 1 Dec 1996
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 7 Jul 199612 Jul 1996

Conference

ConferenceProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period7/07/9612/07/96

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    Lo, J. R., Tseng, T-Y., Tyan, J. H., & Huang, J. C. M. (1996). Luminescent properties of sol-gel prepared Y3Al5O12:Tb thin films. 197-201. Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .