A series of Tb-activated Y3Al5O12 films have been fabricated by spin coating on silicon substrate with sol-gel solutions. The formation of a single garnet phase is observed at 800 °C for 1 h in rapid thermal annealing furnace. The emission spectrum of the films induced by ultraviolet (UV) and electron excitations show the 5D to 6F transition and consisted of two groups, 5D3 to 6F (before 485 nm) and 5D4 to 6F (after 485 nm). The emission intensities of the films are dependent on the Tb concentrations.
|Number of pages||5|
|State||Published - 1 Dec 1996|
|Event||Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia|
Duration: 7 Jul 1996 → 12 Jul 1996
|Conference||Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC|
|Period||7/07/96 → 12/07/96|