Well-aligned ZnO nanorods grown on silicon substrates buffered with ZnO film were postannealed at 200-1000 °C in various atmospheres. The optical properties of ZnO nanorods were much improved by annealing at high temperatures in both atmospheres of N2 and O2. This improvement was ascribed to the decrease in structure defects as compared to as-grown ZnO nanorods. However, for the ZnO nanorods annealed in H2 N2, a stronger UV emission occurs at 600 °C; above that the UV emission rapidly disappeared, which was attributed to the collapse of the ZnO nanorods due to H2 etching during a higher-temperature annealing in H2 N2. The crystallinity and optical properties of the ZnO nanorods can be controlled by postannealing treatment.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Jan 2006|