Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

C. K. Shu*, H. H. Chen, W. H. Lee, Y. C. Pan, H. Y. Huang, J. Ou, Wei-Kuo Chen, W. H. Chen, M. C. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Photoluminescence dynamic responses of a heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy have been investigated. As the probe power density increased from 2.5 to 925 W/cm2, a Mg-related emission band shifted from 2.82 to 3.16 eV revealing characteristics of donor-acceptor pair recombination. The intensity evolution also showed slow decay that suggests the metastable emission behavior. A simple potential barrier model was proposed to occur between the Mg related deep levels and common Mg acceptor level, which impedes electron relaxation and thus slows down the luminescence decay. From the variation of decay time constant with temperature, a barrier energy was deduced to be about 69 meV which is very close to the electrical result of 68 meV.

Original languageEnglish
Pages (from-to)L306-L308
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number4 A
DOIs
StatePublished - 1 Apr 2001

Keywords

  • Impurities in semiconductors
  • Luminescence
  • Metastable
  • Optical properties

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