Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure

C. E. Lee*, Hao-Chung Kuo, Y. C. Lee, M. R. Tsai, Tien-Chang Lu, S. C. Wang, C. T. Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

The flip-chip light-emitting diodes (FC-LEDs) with geometric sapphire shaping structure were investigated. The sapphire shaping structure was formed on the bottom side of the sapphire substrate by a chemical wet etching technique for light extraction purpose. The crystallography-etched facets were (1010) M-plane, (1102) R-plane, and (1120) A-plane against the (0001) c-axis with the angles range between 29° ∼ 60°. These large slope oblique sidewalls are useful for light extraction efficiency enhancement. The light-output power of sapphire shaping FC-LEDs was increased 55% (at 350-mA current injection) compared to that of conventional FC-LEDs.

Original languageEnglish
Article number4429339
Pages (from-to)184-186
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number3
DOIs
StatePublished - 1 Feb 2008

Keywords

  • Flip-chip light-emitting diodes (FC-LEDs)
  • Geometric sapphire shaping
  • Oblique sidewall
  • Sapphire wet etching

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