Lucky-Electron Model of Channel Hot-Electron Injection in MOSFET's

Ping Keung Ko, Chen-Ming Hu, Simon Tam

Research output: Contribution to journalArticlepeer-review

313 Scopus citations


The lucky-electron concept is successfully applied to the modeling of channel hot-electron injection in n-channel MOSFET's, although the result can be interpreted in terms of electron temperature as well. This results in a relatively simple expression that can quantitatively predict channel hot-electron injection current in MOSFET's. The model is compared with measurements on a series of n-channel MOSFET's and good agreement is achieved. In the process, new values for many physical parameters such as hot-electron scattering mean-free-path, impactionization energy are determined. Of perhaps even greater practical significance is the quantitative correlation between the gate current and the substrate current that this model suggests.

Original languageEnglish
Pages (from-to)1116-1125
Number of pages10
JournalIEEE Transactions on Electron Devices
Issue number9
StatePublished - 1 Jan 1984

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