LPCVD of InN on GaAs(110) using HN3 and TMIn: comparison with Si(100) results

Y. Bu*, Ming-Chang Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(110) and Si(100) using HN3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XPS spectra. the He(II) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(110), while grains with diameter of nearly 100 nm were observed for InN on Si(100).

Original languageEnglish
Title of host publicationMetal-Organic Chemical Vapor Deposition of Electronic Ceramics
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Pages21-26
Number of pages6
ISBN (Print)1558992340
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 29 Nov 19932 Dec 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume335
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period29/11/932/12/93

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