Low‐Pressure Chemical Vapor Deposition of Silicon Carbide Thin Films from Organopolysilanes

Hsin-Tien Chiu*, Pei‐Fang ‐F Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

(Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline β‐SiC thin films on silicon substrates at 1000–1200°C in a low‐pressure hot‐wall chemical vapor deposition reactor. The thin films were analyzed by X‐ray diffraction, scanning electron microscopy and X‐ray photoelectron spectroscopy.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalJournal of the Chinese Chemical Society
Volume38
Issue number3
DOIs
StatePublished - Jun 1991

Keywords

  • Low‐pressure chemical vapor deposition
  • Organopolysilanes
  • Silicon carbide thin films

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