Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs

D. S. Yu*, Albert Chin, B. F. Hung, W. J. Chen, C. X. Zhu, M. F. Li, S. Y. Zhu, D. L. Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A low workfunction NiSi:Hf and NiTiSi gate that were integrated onto SiO2/Si, novel high-κ LaAlO3/GOI n-MOSFETs, were developed. The Hf or TiSi is for low workfunction control and NiSi is for low resistivity. This separate workfunction control and achieved low resistivity allows applying various silicided gates for low resistive dual workfunction gate technology. Workfunctions of 4.3 and 4.2eV are obtained for NiTiSi and NiSi:Hf due to the interface TiSi and Hf control, which deals for n-MOSFETs.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages21-22
Number of pages2
DOIs
StatePublished - 1 Dec 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: 21 Jun 200423 Jun 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

ConferenceDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period21/06/0423/06/04

Cite this